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Using nitrogen-vacancy defects in diamond as in-situ sensors of band bending

Spatial mapping of band bending in semiconductor devices using in situ quantum sensors Authors: D.A. Broadway, N. Dontschuk, A. Tsai, S. E. Lillie, C. T.-K. Lew, J. C. McCallum, B. C. Johnson, M. W. Doherty, A. Stacey, L. C. L. Hollenberg & J.-P. Tetienne Nature Electronics 1, 502–507 (2018) Recommended with a commentary by Toeno […]

Correspondents prior to last two years

Elihu Abrahams, Rutgers University | View Contributions | Vivek Aji, University of California, Riverside |  View Contributions | Jason Alicea, California Institute of Technology | View Contributions | David Andelman, Tel Aviv University | View Contributions | Philip Anderson, Princeton University, Princeton | View Contributions | Arezoo M. Ardekani, University of Notre Dame | View Contributions | […]

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