Electronic bands of twisted graphene layers

Posted in Journal Articles on November 30, 2018 at 9:20 am by JCCMP

1. Origin of Mott Insulating Behavior and Superconductivity in Twisted Bilayer Graphene
Authors: Hoi Chun Po, Liujun Zou, Ashvin Vishwanath, and T. Senthil
arXiv:1803.09742, Phys. Rev. X 8, 031089 (2018)

2. Symmetry, Maximally Localized Wannier States, and a Low-Energy Model for Twisted Bilayer Graphene Narrow Bands
Authors: Jian Kang and Oskar Vafek
arXiv:1805.04918, Phys. Rev. X 8, 031088 (2018)

3. Maximally-localized Wannier orbitals and the extended Hubbard model for the twisted bilayer graphene
Authors: Mikito Koshino, Noah F. Q. Yuan, Takashi Koretsune, Masayuki Ochi, Kazuhiko Kuroki, Liang Fu
arXiv:1805.06819, Phys. Rev. X 8 031087 (2018)

Recommended with a commentary by Francisco Guinea, University of Manchester.
|View Commentary (pdf)|

JCCM_November_2018_03

Guidelines for Comments by Members:
Members are invited to comment on the chosen papers and refer only to papers intimately related to the papers selected. Other comments and suggestions can be transmitted to the organizers through the 'Guest book' link. These comments will be put on the web-site and the archives so that they can be read by other members. Just as in the Guidelines to the Corresponding Members, we suggest that the comments be confined to substantive issues of science and in order to illuminate the subject matter. A collegial and respectful tone is suggested. Issues of priority should not be raised in the comments.

Leave Your Comment Below

Your email address will not be published. Required fields are marked *

This site uses Akismet to reduce spam. Learn how your comment data is processed.

google

google