Electronic bands of twisted graphene layers

Posted in Journal Articles on November 30, 2018 at 9:20 am by JCCMP

1. Origin of Mott Insulating Behavior and Superconductivity in Twisted Bilayer Graphene
Authors: Hoi Chun Po, Liujun Zou, Ashvin Vishwanath, and T. Senthil
arXiv:1803.09742, Phys. Rev. X 8, 031089 (2018)

2. Symmetry, Maximally Localized Wannier States, and a Low-Energy Model for Twisted Bilayer Graphene Narrow Bands
Authors: Jian Kang and Oskar Vafek
arXiv:1805.04918, Phys. Rev. X 8, 031088 (2018)

3. Maximally-localized Wannier orbitals and the extended Hubbard model for the twisted bilayer graphene
Authors: Mikito Koshino, Noah F. Q. Yuan, Takashi Koretsune, Masayuki Ochi, Kazuhiko Kuroki, Liang Fu
arXiv:1805.06819, Phys. Rev. X 8 031087 (2018)

Recommended with a commentary by Francisco Guinea, University of Manchester.
|View Commentary (pdf)|

DOI: 10.36471/JCCM_November_2018_03
https://doi.org/10.36471/JCCM_November_2018_03

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